Français
- NTE Electronics, Inc
- Sprague-Goodman
- Sanyo
- Renesas Electronics Corporation
- Panasonic
- onsemi
- NXP Semiconductors
- MACOM Technology Solutions
- Infineon Technologies
- Skyworks Solutions
- Toshiba Electronic Devices and Storage Corporation
- Diodes Incorporated
- Microchip Technology
Condition du rapport de capacité
- 15.5kW
- 900mV
- [email protected]
- Overvoltage protection(OVP);Short-Circuit Protection(SCP);Thermal Protection(OTP);Overcurrent Protection(OCP);Undervoltage Protection(UVP)
- 4040 pF @ 13 V
- 1624 pF @ 40 V
- 56.42.9
- 3100 pF @ 275 V
- 1621 pF @ 400 V
Série
- 74AVCA164245
- DLLR-L30D
- 40 V
- Active
- 149Ohm @ 100MHz
- GC2500
Q @ Vr, F
- 521ns
- 850mΩ@2.5V,500mA
- 7470
- 3mA
- 100A
- 400V, 20A, 2.2Ohm, 15V
- 820mW (Ta), 52W (Tc)
- 7221 pF @ 15 V
- MURSD1020
- SMA2EZ47
- 2.3V @ 92µA
- SICAC0860
- SMBJ5939
- 620 mV @ 1 mA
- 1307 pF @ 30 V
- 36.2A (Ta), 128A (Tc)
- 1SMC5345
Statut du produit
- HAFUHM0200
- 36Ohm @ 5MHz
- 2
- 6-SON (2.55x1.56)
- Active
Numéro de produit de base
- 4V @ 15V, 15A
- 330uA~580uA
- 48-TSOP I
- UDFN2x3-8L
- LCC-52
- 900mV~1.65V
- 17SZ Series
- 25ns@5V,15pF
- 74LV
- 180Ω@100MHz;230Ω@100MHz
- DFN-10
- 105Ω@100MHz
- -25℃~+100℃
- SMD,2.05x1.25x1.2mm
- 430mΩ
- FCBGA-672
- 3.5V~18V
- 33MHz
- 1mA@150V
- 840mV@20A
- 80uA
- 890W
- 1mA@30V
- ROM
- 36ns/250ns
- 3745 pF @ 400 V
- ALD310708
- Fire Lighting Circuit
- STF46
- CMRD60
- B48
- 74GTL2014
- 3.3W (Ta), 65W (Tc)
- 483pF @ 1V, 1MHz
- 16.5 µs
- R8009
- RGTH50
- 6nC @ 10V, 16nC @ 10V
- 9985 pF @ 20 V
- AOND629
- 1108 pF @ 30 V
- MURS1040
- SR3150
- MURB15120
- 5190 pF @ 50 V
- FMMT4230
- MBRB880
- 12A (Ta), 59A (Tc)
- MURS840
- NI-400S-2SA
- 6 V @ 10 mA
- BR29
rapport de capacité
- 19.1mJ
- 500mA
- 865pF
- 190uA
- 9.5V ~ 26V
- SIL02
- MD260
- 120mOhm @ 38A, 10V
- 61 nC @ 15 V
Température de fonctionnement
- 102
- 1.25" (31.80mm)
- 1-Wire®, I2C, SPI
- 1 mH @ 10 kHz
- 0.25V @ 250mA
- 11.2V
- 0.004065 Ohms
- SSCMNND
- SFH 2400
- ZL40211
- 9.8A
- CM1011R
- ±0.8%
- R4
- 4.95V ~ 14.95V
- Ethernet, Telecom
- TPS3610
- 0.126" L x 0.063" W (3.20mm x 1.60mm)
- 810Mbps
- -55°C ~ 125°C
Type de montage
- RMIA45
- 1M
- CM6460R
- 0 ~ 2000.00mm (0 ~ 78.74")
- 330 µH @ 10 kHz
- Surface Mount
Boîtier / Encoche
- Low Pass
- LMK02002
- 0.900" Dia (22.86mm)
- SS566
- IXTX210
- SDX100
- SMBJ8
- 45pF@10V
- 0.350" L x 1.04" W (8.89mm x 26.42mm)
- 43.2A
- Buck-Boost
- MELF
- XC9503
- P-244
- P102
- PMBTA45
- 15.5mOhm @ 8.5A, 4.5V
- CANbus, EBI/EMI, I2C, Microwire, SPI, SSI, SSP, UART/USART
- 7.5 mH @ 1 kHz
- 700mOhm @ 5mA, 200MHz
- HD02
- 4 Min
- SMAJ51
- Die
Fournisseur, Composant, Emballage du dispositif
- 23700 pF @ 25 V
- 26.06.8
- DSPIC33EV32GM102
- 40 µA @ 23 V
- SOD-882D
- 0.5mT ~ 3.5mT
- Grade 8
- L8104
- VC2220K122
- ST8R00
- FCX1147A
- SMLJ43
- 2.8V @ 150mA
- 0.300" (7.62mm)
- 400mA
- G4860
- T10-S-SW
- 8V ~ 17.6V
- 30pF @ 1MHz
- Chip
Type de diode
- DSPIC33FJ128MC506
- BZT52-B-Q
- 411000
- Single
Tension - Reverse de pointe (Max)
- TC7117
- 5119 pF @ 30 V
- 91500
- 24mA;64mA
- ER504
- 195nF@25V
- 18.2nF@10V
- 2.5A
- NTTFSS1
- 96.1W (Tc)
- 120VAC, 200VDC
- 30 V
Capacitance @ Vr, F
- CCC, CSA, cURus, EAC, ENEC, RINA, UKCA, VDE
- NCT6793
- 1.95kW
- N79E855
- 2.4 kV
- 530ns
- 1.2kA
- 55pF
- 200kHz~1.4MHz
- 75mA
- 900Ω@40MHz
- Through Hole-4P,25x14.5mm
- 63KB
- QFN-64
- 415mW
- Knowles Dielectric Labs
- SIGC156
- 1mOhm @ 38A, 10V
- DCL
- PSMN029
- 1.24 V @ 2000 A
- 27ns/94ns
- 30mOhm @ 6A, 10V, 28mOhm @ 6.5A, 10V
- 3.5W (Ta), 7.3W (Tc)
- 42A (Ta), 80A (Tc)
- 80 @ 100mA, 3V
- MBRB860
- MBR730
- BZV49C3V3
- SMBT445
- 9 mA @ 1.2 kV
- MUR5U60
- 1EZ18
- 1MHz ~ 2.7GHz
- 9-WDFN (3.3x3.3)
- 1222 pF @ 50 V
- 700mOhm @ 1A, 10V
- 0.8pF @ 6V, 1MHz
Niveau de Sensibilité à l'Humidité (MSL)
- Vendor Undefined
- Not Applicable
- 3 (168 Hours)
- 1 (Unlimited)
Statut REACH
- REACH info available upon request
- REACH Affected
- Vendor Undefined
- REACH Unaffected
ECCN
- OBSOLETE
- EAR99
HTSUS
- 8541.59.0040
- 8541.10.0070.
- 8542.39.0001
- 8542.31.0001
- 8541.10.0050
- 8541.30.0080
- 0000.00.0000
- 8541.49.1050
- 8541.59.0080
- 8541.10.0060
- 8541.10.0070
- 8541.10.0080
- 8541.10.0040
Statut RoHS
- Not applicable
- RoHS Compliant
- RoHS non-compliant
- ROHS3 Compliant
Résultat:
1131 Objets
| Image | Numéro de pièce | Fabricant | Description | Fiche technique | Quantité | Action |
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MMBV109LT1G | onsemi | DIODE TUNING SS 30V SOT23 | Télécharger |
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MMBV109LT3 | onsemi | DIODE TUNING SS 30V SOT-23 | Télécharger |
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MMBV109LT3G | onsemi | DIODE TUNING SS 30V SOT-23 | Télécharger |
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MMBV2101LT1G | onsemi | DIODE TUNING SS 30V SOT23 | Télécharger |
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MMBV2101LT1 | onsemi | DIODE TUNING SS 30V SOT23 | Télécharger |
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MMBV2107LT1 | onsemi | DIODE TUNING SS 30V SOT-23 | Télécharger |
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MMBV2105LT1 | onsemi | DIODE TUNING SS 30V SOT23 | Télécharger |
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MMBV2105LT1G | onsemi | DIODE TUNING SS 30V SOT23 | Télécharger |
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MGV-125-21 | macom | VARACTOR DIODE,GAAS,HYPERABRUPT, | Télécharger |
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MGV-125-22 | macom | VARACTOR DIODE,GAAS,HYPERABRUPT, | Télécharger |
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