Français
- Bourns, Inc.
- WeEn Semiconductors
- MOSLEADER
- EVVO Semi
- Parallax
- TT Electronics
- Sparkfun
- UMW
- Anbon Semiconductor
- HY Electronic (Cayman) Limited
- Gearbox Labs
- Rectron USA
- PANJIT
- Manufacturers
- Sanken Electric Co., Ltd.
- MDD
- Plymouth
- Diotec Semiconductor
- Siemens
- Intersil (Renesas Electronics Corporation)
- Rochester Electronics
- Philips
- NEC Corporation
- General Semiconductor (Vishay)
- National Semiconductor
- Harris Corporation
- Sanyo
- NTE Electronics, Inc.
- NTE Electronics, Inc
- Microsemi
- Microchip Technology
- Vishay General Semiconductor – Diodes Division
- Toshiba Electronic Devices and Storage Corporation
- Diodes Incorporated
- STMicroelectronics
- SMC Diode Solutions
- Renesas Electronics Corporation
- Panasonic
- ROHM Semiconductor
- Motorola
- Fairchild Semiconductor
- TT Electronics / Optek Technology
- NXP Semiconductors
- MACOM Technology Solutions
- Texas Instruments
- Comchip Technology
- Venkel LTD
- Micro Commercial Components (MCC)
- Nexperia
- Central Semiconductor
- Good Ark Semiconductor
- onsemi
- Taiwan Semiconductor
- Infineon Technologies
Série
- 510 mV @ 200 mA
- Active
- 79400pF @ 800V
- 149Ohm @ 100MHz
Statut du produit
- 36Ohm @ 5MHz
- HAFUHM0200
- 250mOhm
- 2
- 6-SON (2.55x1.56)
Numéro de produit de base
- 810 mOhms
- 33mΩ@2.5V
- 6mΩ@10V;7.7mΩ@4.5V
- 3.755nF@25V
- 880 mV @ 100 A
- MSP430F478
Température de fonctionnement
- 1-Wire®, I2C, SPI
- 8.6ns, 6ns
- 2373
- 0.25V @ 250mA
- CM1011R
- 4.500" (114.30mm)
- 11.2V
- 965J
- 1.25" (31.80mm)
- 21755.66PSI (150000kPa)
- 23.1nC @ 10V
- ±2.52%
- SSCMNND
- 0.2µA @ ±15V
- ZL40211
- 1.5 mA
- 48-TFBGA (6x7)
- ADS5553
- 460PSI (3171.59kPa)
- SFH 2400
- Ethernet, Telecom
- TPS3610
- 3.4 A
- 102
- 3.15V
- 4.95V ~ 14.95V
- SST39VF400
- S-93A86
- 0.126" L x 0.063" W (3.20mm x 1.60mm)
- 810Mbps
- R4
Grade
- 2SK2744
- 232.06PSI (1600kPa)
- BU2630
- 0.222" L x 0.122" W (5.65mm x 3.10mm)
Qualification
- SSM6N67
- 8-HTSOP-JES
- XCAL4
- 50 mA
- NJW1110
Type de montage
- SMBJ14
- RMIA45
- 0 ~ 2000.00mm (0 ~ 78.74")
- RTY360
- 1M
- CM6460R
- 330 µH @ 10 kHz
Boîtier / Encoche
- 410 V
- LPC1100LV
- 2W (Ta), 18.8W (Tc)
- LEG66-1RS4
- 74GTLPH32945
- 3404.0114
- REG104
- 32.4 V
- 140MHz, 180MHz
- 63RS50
- 1C1
- 131Ohm @ 100MHz
- 16209
- IXTX210
- 5.6V ~ 40V
- MIC5322
- ADS1626
- 130°
- NBXDPA01
- NJM2256
- 168-CPGA
- 4.3V
- 2GHz, 500MHz
- QD606
- FMET-23
- 551.18" (14m)
- 1.9V @ 15V, 100A (Typ)
- BUK7Y65
- 780Ω@100MHz
- 74AS4374
- 1.866" L x 1.693" W x 1.929" H (47.40mm x 43.00mm x 49.00mm)
- RM Series
- 277V;480V
- 37nC @ 4.5V
- CGRC303
- 450 V
- 7.7kW
- 2.570" Dia (65.28mm)
- 700mA, 100mA
- 1.11mOhm
- SBT10100
- 0.866" L x 0.142" W (22.00mm x 3.60mm)
- 65V
- 3810K
- DS125BR800
- 12000pF @ 10kHz
- PDB-V617
- 0.900" Dia (22.86mm)
- ELM3054
- 0.076" Dia (1.93mm)
- GP20
- EZ1083
- 23pF @ 30V
- 54-TSOP (0.400", 10.16mm Width)
- 820 µA @ 600 V
- 128µVrms
- 75 A
- 64-EasyBGA (8x10)
- 6-PowerUFDFN
- Pulse Count
- 2.75V ~ 5.5V
- MELF
- 400Ohm
- 8.5
- 1206 (3216 Metric), 6 PC Pad
- NSBC115
- PNE20050
- 2.480" Dia (63.00mm)
- 10-TMLF® (2x2)
- 44-QFN (5x5)
- ACE8001
- PWM Speaker Output, SPI
- 0.350" L x 1.04" W (8.89mm x 26.42mm)
- PMBTA45
- SIRA88
- BH18SA3
- 105mOhm @ 12A, 18V
- [email protected]
- TLV70215
- 0.45V @ 150mA, 0.45V @ 150mA, 0.33V @ 150mA
- MJE15033
- CMOS, DTL, ECL, MOS, Open-Collector, TTL
- 43.2A
- RS3B
- INA270
- A/D 2x16/20b Sigma-Delta
- 700mOhm @ 5mA, 200MHz
- 50.5
- PI6C18551
- 2.85V, 20mA
- 0.93V @ 1.5A
- IR11688
- SMAJ51
Fournisseur, Composant, Emballage du dispositif
- 2.704nF
- 9.7nF
- -2.85V
- JTM-1-1REC4
- OV04685
- UF3D
- MMBZ4703
- HA7-2645
- 187Ohm @ 100MHz
- 8V ~ 17.6V
- 74STX1G04
- 17.8pF@10V
- LT3420
- 100 µA @ 1.2 kV
- 12 ns
- 22RIA100
- 500 mV @ 1 A
- 782485
- 3950 pF @ 25 V
- VTPS1192
- BD46442
- 106.25MHz, 212.5MHz
- FD-32
- MCP79520
- 30 mA
- T21-61
- DDTC (R1≠R2 SERIES) CA
- 2SB1424
- 700µs
- 24.9 nC @ 10 V
- 620W
- 5.5 ns
- 180Ohm @ 100MHz
- 1.5 pF
- HWB18
- MAZ827
- LEJ11-1-63
- 2.4mm
- MT29GZ5A5
- 10kΩ@10MHz;15kΩ@10MHz
- 2.2mA, 3.6mA
- RT9045
- 187W
- Fault Protection, T-Switch Configuration
- 32.7pF
- 84A
- 136.35V
- FDH400
- 234 V
- 13pF@50V
- W-QFN4040-20 (SWP) (Type A1)
- 7.8mOhm @ 16.4A, 10V
- ST8R00
- 71pF
- 33mOhm @ 8.9A, 4.5V
- 1.45 V @ 6 A
- 1.142" Dia (29.00mm)
- PYF08A
- BU4S71
- CR1300
- 330Ω@45MHz
- 0.328" (8.33mm)
- L8104
- 57-CSP (5.17x3.68)
- BU45L272
- 815pF @ 1V, 1MHz
- AOZ1044
- PD95-21
- 834pF @ 10V
- 39mOhm @ 36A, 10V
- 6mm²
- SBC857
- IBS04SF15
- SMD-4P,4.9x3.8mm
- 7090.9010
- 0.338" (8.59mm)
- A1441
- 72.00mm Dia
- LM3S2620
- 520-FCBGA (21x21)
- 30pF @ 1MHz
- 0.300" (7.62mm)
- 490mA
- 4260 pF @ 30 V
- AOZ2023
- Leap Year, RAM
- 50 nC @ 18 V
- 245000
- 1.237GHz
- SMLJ43
- 3 V ~ 6 V
- BZM55B22
- VC2220K122
- 3.5W
- 260A (Tj)
- CSA, METI, PSE, UL
- G4860
- 1.4ns @ -5V, -
- PI3WVR13412
- PDB-V609
- 2.8V @ 150mA
Goodkvoltance - Détérioration du Collecteur à l'Émetteur (Max)
- TAC-10
- 060-0574
- AND/NAND Gate
- TSOP33338
- MSP430F67661
- 1.2V, 1.6V
- PIC16F1513
- BD8152
- PIC16LF1716
- IS3051
Puissance - Max
- GPA805
- 1200
- BU97601
- MB1240
- 300 @ 2A, 6V
- 9024
- 0.630" W x 0.295" H (16.00mm x 7.50mm)
- 4" (101.6mm) Flange
- 2440-43
- 40Ω
- 5.95V
- 5.5Ω
- 620 V
- BA63JC5
- MTD3055
- ±0.5, ±0.3
- 3.6ns
- DSPIC33EP128GS804
- 26ns, 26ns (Typ)
- 0.85V ~ 0.95V
- 74FCT251
- 4.1V ~ 6V
- 28mOhm @ 7A, 10V, 52mOhm @ 5.3A, 10V
- 160 @ 1A, 2V
- 14V (Max)
- TS932
- ADS5220
- 1225 pF @ 20 V
- 3470 pF @ 15 V
- 76580
- DAC7716
- 67ps
- 1P1G126
- 230kbps
- 58ns
- MAX17670
- 1.62 V ~ 5.5 V
- 8V185
- 3.7V @ 50µA
- SFSRC
- ADC12J1600
- TLC3704
- 750mOhm @ 1.8A, 10V
- 11V~13V
- ADC08L060
- 13.5ns
- ADC10D040
- 2.5A
- DO-214AB (SMC)
- Chlorine Dioxide (CIO2)
- CSI-2, USB
- HEF40174
- 768k
- Analog Current/Voltage, PNP - Open Collector
- CDCLVC1310
- ADC1061
- PCM1755
- R-2R
- 280ns
- EPI 8287
- 102.7A
- TLE5014
- ARM® Cortex®-R5F
- 6
- 53dB ~ 30dB (1kHz ~ 1MHz)
- 0.825" W x 0.305" H (20.95mm x 7.75mm)
- EEPROM, SRAM
- 18V (Max)
- 220 mOhms
- 1 ~ 1/128
Courant – Collecteur (Ic) (Max)
- TPS3514
- PIC16F610
- TSC2020
- MOC305
- LM3495
- HV7355
- 24W
- EMC1702
- Serial, SPI
- 2.37V ~ 5.5V
- 12V
- 137.8" (3.5m)
- 75 µA @ 600 V
- PIC16LC926
- BD82103
Niveau de Sensibilité à l'Humidité (MSL)
- 3 (168 Hours)
- Vendor Undefined
- Not Applicable
- 1 (Unlimited)
Statut REACH
- REACH info available upon request
- Vendor Undefined
- REACH Affected
- REACH Unaffected
ECCN
- 3A991
- OBSOLETE
- EAR99
HTSUS
- 8541.10.0040
- 7019.90.5150
- 8541.29.0000
- 8541.21.0000
- 8473.30.1180
- 8542.31.0001
- 8541.30.0080
- 8541.49.7080
- 8542.39.0001
- 8542.33.0001
- 8541.21.0040
- 0000.00.0000
- 8541.29.0040
- 8541.29.0075
- 8541.21.0095
- 8541.29.0095
- 8541.10.0080
- 8541.10.0070
- 8541.21.0075
Statut RoHS
- Not applicable
- RoHS non-compliant
- RoHS Compliant
- ROHS3 Compliant
Résultat:
20119 Objets
| Image | Numéro de pièce | Fabricant | Description | Fiche technique | Quantité | Action |
|---|---|---|---|---|---|---|
|
JANTX2N6287 | macom | TRANS PNP DARL 100V 20A TO3 | Télécharger |
-
+
|
|
|
JANTX2N6284 | macom | TRANS NPN DARL 100V 20A TO204AA | Télécharger |
-
+
|
|
|
JANTX2N6284 | microchip-technology | TRANS NPN DARL 100V 20A TO204AA | Télécharger |
-
+
|
|
|
JANTX2N6251 | microchip-technology | TRANS NPN 350V 10A TO3 | Télécharger |
-
+
|
|
|
JANTX2N6274 | microchip-technology | TRANS NPN 100V 50A TO3 | Télécharger |
-
+
|
|
|
JANTX2N6299 | microchip-technology | TRANS PNP DARL 80V 8A | Télécharger |
-
+
|
|
|
JANTX2N6298 | microchip-technology | TRANS PNP DARL 60V 8A | Télécharger |
-
+
|
|
|
JANTX2N6287 | microchip-technology | TRANS PNP DARL 100V 20A TO3 | Télécharger |
-
+
|
|
|
JANTX2N5681 | microchip-technology | NPN TRANSISTOR | Télécharger |
-
+
|
|
|
JANTX2N6283 | microchip-technology | TRANS NPN DARL 80V 0.001A TO204 | Télécharger |
-
+
|
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2012